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Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
Khera, Ejaz Ahmad; Mahata, Chandreswar; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R M Arif; Rasheed, Umbreen.
Afiliación
  • Khera EA; Department of Physics Bahawalnagar Campus, The Islamia University of Bahawalpur 63100 Pakistan.
  • Mahata C; Division of Electronics and Electrical Engineering, Dongguk University Seoul 04620 South Korea.
  • Imran M; Department of Physics, Govt. College University Faisalabad 38000 Pakistan.
  • Niaz NA; Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan 60800 Pakistan fayyazhussain248@yahoo.com arifbzu@googlemail.com.
  • Hussain F; Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan 60800 Pakistan fayyazhussain248@yahoo.com arifbzu@googlemail.com.
  • Khalil RMA; Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan 60800 Pakistan fayyazhussain248@yahoo.com arifbzu@googlemail.com.
  • Rasheed U; Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan 60800 Pakistan fayyazhussain248@yahoo.com arifbzu@googlemail.com.
  • SungjunKim; Division of Electronics and Electrical Engineering, Dongguk University Seoul 04620 South Korea.
RSC Adv ; 12(19): 11649-11656, 2022 Apr 13.
Article en En | MEDLINE | ID: mdl-35432948
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido