Optimization of Feedback FET with Asymmetric Source Drain Doping Profile.

Lee, Inyoung; Park, Hyojin; Nguyen, Quan The; Kim, Garam; Cho, Seongjae; Cho, Ilhwan

Lee, Inyoung; Park, Hyojin; Nguyen, Quan The; Kim, Garam; Cho, Seongjae; Cho, Ilhwan.

Afiliación

Lee I; Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea.
Park H; Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea.
Nguyen QT; Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea.
Kim G; Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea.
Cho S; Department of Electronic Engineering, Gachon University, Seongnam-si 13120, Gyeonggi-do, Korea.
Cho I; Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, Korea.

Micromachines (Basel) ; 13(4)2022 Mar 25.

Article en En | MEDLINE | ID: mdl-35457814

Palabras clave

TCAD; device optimization; feedback field-effect transistor (FBFET); onoff current ratio; subthreshold swing

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google