ALD Al<sub>2</sub>O<sub>3</sub> gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT.

Chen, Kuan-Yu; Yang, Chih-Chiang; Huang, Chun-Yuan; Su, Yan-Kuin

ALD Al₂O₃ gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT.

Chen, Kuan-Yu; Yang, Chih-Chiang; Huang, Chun-Yuan; Su, Yan-Kuin.

Afiliación

Chen KY; Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University Tainan 701 Taiwan.
Yang CC; Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University Yongkang 710 Taiwan 298r.yang@gmail.com.
Huang CY; Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University Yongkang 710 Taiwan 298r.yang@gmail.com.
Su YK; Department of Applied Science, National Taitung University Taitung 950 Taiwan laputa@nttu.edu.tw.

RSC Adv ; 10(17): 9902-9906, 2020 Mar 06.

Article en En | MEDLINE | ID: mdl-35498582

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2020 Tipo del documento: Article