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Single layer aligned semiconducting single-walled carbon nanotube array with high linear density.
Liu, Hao; Liu, Fengjing; Sun, Zhaolou; Cai, Xiaoyong; Sun, Huijuan; Kai, Yuan; Chen, Li; Jiang, Chao.
Afiliación
  • Liu H; The Collaborative Innovation Center of Chemical Science and Engineering, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, People's Republic of China.
  • Liu F; CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Sun Z; CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Cai X; CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Sun H; School of Materials Science and Engineering, Anyang Institute of Technology, Anyang 455000, People's Republic of China.
  • Kai Y; CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Chen L; CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
  • Jiang C; CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Nanotechnology ; 33(37)2022 Jun 20.
Article en En | MEDLINE | ID: mdl-35653931
ABSTRACT
Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge. Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility. Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (Vpp), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubesµm-1showed relatively high device performance of FET. The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2022 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2022 Tipo del documento: Article