The non-volatile electrostatic doping effect in MoTe<sub>2</sub> field-effect transistors controlled by hexagonal boron nitride and a metal gate.

Khan, Muhammad Asghar; Khan, Muhammad Farooq; Rehman, Shania; Patil, Harshada; Dastgeer, Ghulam; Ko, Byung Min; Eom, Jonghwa

The non-volatile electrostatic doping effect in MoTe₂ field-effect transistors controlled by hexagonal boron nitride and a metal gate.

Khan, Muhammad Asghar; Khan, Muhammad Farooq; Rehman, Shania; Patil, Harshada; Dastgeer, Ghulam; Ko, Byung Min; Eom, Jonghwa.

Afiliación

Khan MA; Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea.
Khan MF; Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.
Rehman S; Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.
Patil H; Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Korea.
Dastgeer G; Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.
Ko BM; Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Korea.
Eom J; Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea.

Sci Rep ; 12(1): 12085, 2022 Jul 15.

Article en En | MEDLINE | ID: mdl-35840642

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido

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