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The Effect of the Doping Amount on Electroelastic Coupled-Wave Scattering and Dynamic Stress Concentration around Defects in BNT Doped FN Materials.
Fan, Jiawei; Zhou, Chuanping; Bao, Junqi; Ji, Huawei; Gong, Yongping; Zhou, Weihua; Lin, Jiang.
Afiliación
  • Fan J; School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
  • Zhou C; School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
  • Bao J; School of Mechatronics Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Ji H; Hangzhou Changchuan Technology Co., Ltd., Hangzhou 310018, China.
  • Gong Y; Hangzhou Changchuan Technology Co., Ltd., Hangzhou 310018, China.
  • Zhou W; School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
  • Lin J; School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
Materials (Basel) ; 15(16)2022 Aug 21.
Article en En | MEDLINE | ID: mdl-36013917
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China
Texto completo
Añadir a Mi BVS
Imprimir
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PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China