Threshold reduction and yield improvement of semiconductor nanowire lasers <i>via</i> processing-related end-facet optimization.

Alanis, Juan Arturo; Chen, Qian; Lysevych, Mykhaylo; Burgess, Tim; Li, Li; Liu, Zhu; Tan, Hark Hoe; Jagadish, Chennupati; Parkinson, Patrick

Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization.

Alanis, Juan Arturo; Chen, Qian; Lysevych, Mykhaylo; Burgess, Tim; Li, Li; Liu, Zhu; Tan, Hark Hoe; Jagadish, Chennupati; Parkinson, Patrick.

Afiliación

Alanis JA; Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester Manchester UK patrick.parkinson@manchester.ac.uk.
Chen Q; Department of Materials, The University of Manchester Manchester UK.
Lysevych M; Australian National Fabrication Facility, The Australian National University Canberra Australia.
Burgess T; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Canberra Australia.
Li L; Australian National Fabrication Facility, The Australian National University Canberra Australia.
Liu Z; Department of Materials, The University of Manchester Manchester UK.
Tan HH; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Canberra Australia.
Jagadish C; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Canberra Australia.
Parkinson P; Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester Manchester UK patrick.parkinson@manchester.ac.uk.

Nanoscale Adv ; 1(11): 4393-4397, 2019 Nov 05.

Article en En | MEDLINE | ID: mdl-36134418

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido

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