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Post-Electric Current Treatment Approaching High-Performance Flexible n-Type Bi2Te3 Thin Films.
Ao, Dongwei; Liu, Wei-Di; Ma, Fan; Bao, Wenke; Chen, Yuexing.
Afiliación
  • Ao D; School of Machinery and Automation, Weifang University, Weifang 261061, China.
  • Liu WD; Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Brisbane, QLD 4072, Australia.
  • Ma F; School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China.
  • Bao W; School of Machinery and Automation, Weifang University, Weifang 261061, China.
  • Chen Y; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Micromachines (Basel) ; 13(9)2022 Sep 17.
Article en En | MEDLINE | ID: mdl-36144166
ABSTRACT
Inorganic n-type Bi2Te3 flexible thin film, as a promising near-room temperature thermoelectric material, has attracted extensive research interest and application potentials. In this work, to further improve the thermoelectric performance of flexible Bi2Te3 thin films, a post-electric current treatment is employed. It is found that increasing the electric current leads to increased carrier concentration and electric conductivity from 1874 S cm−1 to 2240 S cm−1. Consequently, a high power factor of ~10.70 µW cm−1 K−2 at room temperature can be achieved in the Bi2Te3 flexible thin films treated by the electric current of 0.5 A, which is competitive among flexible n-type Bi2Te3 thin films. Besides, the small change of relative resistance <10% before and after bending test demonstrates excellent bending resistance of as-prepared flexible Bi2Te3 films. A flexible device composed of 4 n-type legs generates an open circuit voltage of ~7.96 mV and an output power of 24.78 nW at a temperature difference of ~35 K. Our study indicates that post-electric current treatment is an effective method in boosting the electrical performance of flexible Bi2Te3 thin films.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China