Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures.

Zhang, Xinjiang; Huang, Anping; Xiao, Zhisong; Wang, Mei; Zhang, Jing; Chu, Paul K

Zhang, Xinjiang; Huang, Anping; Xiao, Zhisong; Wang, Mei; Zhang, Jing; Chu, Paul K.

Afiliación

Zhang X; School of Physics, Beihang University, Beijing 100191, People's Republic of China.
Huang A; School of Physics, Beihang University, Beijing 100191, People's Republic of China.
Xiao Z; School of Physics, Beihang University, Beijing 100191, People's Republic of China.
Wang M; School of Physics, Beihang University, Beijing 100191, People's Republic of China.
Zhang J; Microelectronics Department, North China University of Technology, Beijing 100041, People's Republic of China.
Chu PK; Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.

Nanotechnology ; 34(1)2022 Oct 19.

Article en En | MEDLINE | ID: mdl-36191490

Palabras clave

Dirac source; steep-slope transistor; van der Waals heterostructures

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido

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