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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
Du, Yong; Wei, Wenqi; Xu, Buqing; Wang, Guilei; Li, Ben; Miao, Yuanhao; Zhao, Xuewei; Kong, Zhenzhen; Lin, Hongxiao; Yu, Jiahan; Su, Jiale; Dong, Yan; Wang, Wenwu; Ye, Tianchun; Zhang, Jianjun; Radamson, Henry H.
Afiliación
  • Du Y; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wei W; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Xu B; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang G; Beijing Superstring Academy of Memory Technology, Beijing 100176, China.
  • Li B; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
  • Miao Y; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhao X; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
  • Kong Z; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Lin H; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Yu J; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
  • Su J; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Dong Y; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang W; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Ye T; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhang J; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Radamson HH; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Micromachines (Basel) ; 13(10)2022 Sep 22.
Article en En | MEDLINE | ID: mdl-36295932
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza