Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field.

ABSTRACT

The displacement damage dose (DDD) is a common index used to predict the life of semiconductor devices employed in space-based environments where they will be exposed to radiation. The DDD is commonly estimated from the non-ionizing energy loss based on the Norgett-Robinson-Torrens (NRT) model, although a new definition for a so-called effective DDD considers the molecular dynamic (MD) simulation with the amorphization in semiconductors. The present work developed a new model for calculating the conventional and effective DDD values for silicon carbide (SiC), indium arsenide (InAs), gallium arsenide (GaAs) and gallium nitride (GaN) semiconductors. This model was obtained by extending the displacement per atom tally implemented in the particle and heavy ion transport code system (PHITS). This new approach suggests that the effective DDD is higher than the conventional DDD for arsenic-based compounds due to the amorphization resulting from direct impacts, while this relationship is reversed for SiC because of recombination defects. In the case of SiC and GaN exposed to protons, the effective DDD/conventional DDD ratio decreases with proton energy. In contrast, for InAs and GaAs, this ratio increases to greater than 1 at proton energies up to 100 MeV and plateaus because the defect production efficiency, which is the ratio of the number of stable displacements at the end of collision cascade simulated by MD simulations to the number of defects calculated by NRT model, does not increase at damage energy values above 20 keV. The practical application of this model was demonstrated by calculating the effective DDD values for semiconductors sandwiched between a thin glass cover and an aluminum plate in a low-Earth orbit. The results indicated that the effective DDD could be dramatically reduced by increasing the glass cover thickness to 200 µm, thus confirming the importance of shielding semiconductor devices used in space. This improved PHITS technique is expected to assist in the design of semiconductors by allowing the effective DDD values for various semiconductors having complex geometries to be predicted in cosmic ray environments.