Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth.

Roschin, Boris S; Argunova, Tatiana S; Lebedev, Sergey P; Asadchikov, Victor E; Lebedev, Alexander A; Volkov, Yuri O; Nuzhdin, Alexander D

Roschin, Boris S; Argunova, Tatiana S; Lebedev, Sergey P; Asadchikov, Victor E; Lebedev, Alexander A; Volkov, Yuri O; Nuzhdin, Alexander D.

Afiliación

Roschin BS; Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia.
Argunova TS; Ioffe Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia.
Lebedev SP; Ioffe Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia.
Asadchikov VE; Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia.
Lebedev AA; Ioffe Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia.
Volkov YO; Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia.
Nuzhdin AD; Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia.

Materials (Basel) ; 15(21)2022 Oct 31.

Article en En | MEDLINE | ID: mdl-36363260

Palabras clave

SiC; X-ray scattering; atomic force microscopy; epitaxial; graphene; terrace-stepped relief

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Incidence_studies / Risk_factors_studies Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Rusia

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