Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication.

Qian, Fengsong; Deng, Jun; Dong, Yibo; Xu, Chen; Hu, Liangchen; Fu, Guosheng; Chang, Pengying; Xie, Yiyang; Sun, Jie

Qian, Fengsong; Deng, Jun; Dong, Yibo; Xu, Chen; Hu, Liangchen; Fu, Guosheng; Chang, Pengying; Xie, Yiyang; Sun, Jie.

Afiliación

Qian F; Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing100124, China.
Deng J; Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing100124, China.
Dong Y; Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai200093, China.
Xu C; Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing100124, China.
Hu L; Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing100124, China.
Fu G; Fert Beijing Institute and School of Microelectronics, Beihang University, Beijing100191, China.
Chang P; Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing100124, China.
Xie Y; Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing100124, China.
Sun J; National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou350100, China.

ACS Appl Mater Interfaces ; 14(47): 53174-53182, 2022 Nov 30.

Article en En | MEDLINE | ID: mdl-36383777

Palabras clave

gradient temperature; graphene; growth; low temperature; transfer-free; transistor array; wafer scale

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos

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