Contribution of Sub-Gap States to Broadband Infrared Response in Organic Bulk Heterojunctions.

Li, Ning; Park, Insun; Vella, Jarrett H; Oh, Soong Ju; Azoulay, Jason D; Leem, Dong-Seok; Ng, Tse Nga

Li, Ning; Park, Insun; Vella, Jarrett H; Oh, Soong Ju; Azoulay, Jason D; Leem, Dong-Seok; Ng, Tse Nga.

Afiliación

Li N; Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California92093-0407, United States.
Park I; School of Electronic and Optical Engineering, Nanjing University of Science and Technology, 200 Xiaolingwei Street, Nanjing, CN210094, People's Republic of China.
Vella JH; Samsung Advanced Institute of Technology, Samsung Electronics, Co., Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do16678, South Korea.
Oh SJ; Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton45433-7131, Ohio, United States.
Azoulay JD; Department of Materials Science and Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul02841, Republic of Korea.
Leem DS; School of Polymer Science and Engineering, The University of Southern Mississippi, 118 College Drive #5050, Hattiesburg, Mississippi39406, United States.
Ng TN; Samsung Advanced Institute of Technology, Samsung Electronics, Co., Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do16678, South Korea.

ACS Appl Mater Interfaces ; 14(47): 53111-53119, 2022 Nov 30.

Article en En | MEDLINE | ID: mdl-36395383

Palabras clave

bulk heterojunction; infrared detectors; organic semiconductors; sub-bandgap states; temperature coefficient of resistance

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos

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