Black phosphorus electronics.

Huang, Hao; Jiang, Bei; Zou, Xuming; Zhao, Xingzhong; Liao, Lei

Huang, Hao; Jiang, Bei; Zou, Xuming; Zhao, Xingzhong; Liao, Lei.

Afiliación

Huang H; School of Physics and Technology, Wuhan University, Wuhan 430072, China.
Jiang B; School of Physics and Technology, Wuhan University, Wuhan 430072, China.
Zou X; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China. Electronic address: zouxuming@hnu.edu.cn.
Zhao X; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China. Electronic address: 00006796@whu.edu.cn.
Liao L; School of Physics and Technology, Wuhan University, Wuhan 430072, China; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China. Electronic address: liaolei@whu.edu.cn.

Sci Bull (Beijing) ; 64(15): 1067-1079, 2019 Aug 15.

Article en En | MEDLINE | ID: mdl-36659766

Palabras clave

Anisotropy; Contact; Dielectric; Doping; Superlattices; Transistors

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Año: 2019 Tipo del documento: Article País de afiliación: China Pais de publicación: Países Bajos

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