Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory.

Lee, Yong-Bok; Kang, Min-Ho; Choi, Pan-Kyu; Kim, Su-Hyun; Kim, Tae-Soo; Lee, So-Young; Yoon, Jun-Bo

Lee, Yong-Bok; Kang, Min-Ho; Choi, Pan-Kyu; Kim, Su-Hyun; Kim, Tae-Soo; Lee, So-Young; Yoon, Jun-Bo.

Afiliación

Lee YB; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Kang MH; National NanoFab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Choi PK; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Kim SH; Taiwan Semiconductor Manufacturing Company (TSMC) Ltd, Fab 21, Phoenix, AZ, USA.
Kim TS; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Lee SY; SAMSUNG ELECTRONICS Co., Ltd, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Republic of Korea.
Yoon JB; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.

Nat Commun ; 14(1): 460, 2023 Jan 28.

Article en En | MEDLINE | ID: mdl-36709346

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2023 Tipo del documento: Article

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google