The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy.

Liu, Cheng; Zheng, Yonghui; Xin, Tianjiao; Zheng, Yunzhe; Wang, Rui; Cheng, Yan

The Relationship between Electron Transport and Microstructure in Ge₂Sb₂Te₅ Alloy.

Liu, Cheng; Zheng, Yonghui; Xin, Tianjiao; Zheng, Yunzhe; Wang, Rui; Cheng, Yan.

Afiliación

Liu C; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
Zheng Y; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
Xin T; Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China.
Zheng Y; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
Wang R; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.
Cheng Y; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China.

Nanomaterials (Basel) ; 13(3)2023 Jan 31.

Article en En | MEDLINE | ID: mdl-36770543

Palabras clave

Ge2Sb2Te5; electron transport; phase change memory; phase transition

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza

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