Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications.

Chen, Kuan-Yu; Tripathy, Prabhat K; Mondal, Kunal; Zhang, Hongliang; Couet, Adrien; Andrews, Joseph B

Chen, Kuan-Yu; Tripathy, Prabhat K; Mondal, Kunal; Zhang, Hongliang; Couet, Adrien; Andrews, Joseph B.

Afiliación

Chen KY; University of Wisconsin-Madison, Department of Electrical and Computer Engineering, 1415 Engineering Dr., Madison, Wisconsin 53706, United States.
Tripathy PK; Idaho National Laboratory, Pyrochemistry and Molten Salt System Department, Idaho Falls, Idaho 83415, United States.
Mondal K; Idaho National Laboratory, Advanced Manufacturing Department, P.O. Box 83415, Idaho Falls, Idaho 83415, United States.
Zhang H; University of Wisconsin-Madison, Department of Engineering Physics, 1500 Engineering Dr., Madison, Wisconsin 53706, United States.
Couet A; University of Wisconsin-Madison, Department of Engineering Physics, 1500 Engineering Dr., Madison, Wisconsin 53706, United States.
Andrews JB; University of Wisconsin-Madison, Department of Electrical and Computer Engineering, 1415 Engineering Dr., Madison, Wisconsin 53706, United States.

Nano Lett ; 23(7): 2816-2821, 2023 Apr 12.

Article en En | MEDLINE | ID: mdl-37011402

Palabras clave

Schottky diodes; harsh environments; nanowires; silicon carbide; solution processed

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google