Three-dimensional inter-layer optical signal transmission realized by a monolithically integrated semiconductor-based carrier transport structure.

In this study, we proposed and demonstrated a brand new type of monolithic photonic devices which realizes the three-dimensional (3D) all-optical switching for inter-layer signal transmission. This device is composed of a vertical Si microrod which serves as optical absorption material within a SiN waveguide in one layer and as an index modulation structure within a SiN microdisk resonator lying in the other layer. The ambipolar photo-carrier transport property in the Si microrod was studied by measuring the resonant wavelength shifts under continuous-wave laser pumping. The ambipolar diffusion length can be extracted to be 0.88 µm. Based on the ambipolar photo-carrier transport in a Si microrod through different layers, we presented a fully-integrated all-optical switching operation using this Si microrod and a SiN microdisk with a pump-probe technique through the on-chip SiN waveguides. The switching time windows for the on-resonance operation mode and the off-resonance operation mode can be extracted to be 439 ps and 87 ps, respectively. This device shows potential applications for the future all-optical computing and communication with more practical and flexible configurations in monolithic 3D photonic integrated circuits (3D-PICs).