Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing.
Opt Express
; 31(9): 14358-14366, 2023 Apr 24.
Article
en En
| MEDLINE
| ID: mdl-37157301
ABSTRACT
An InGaAsSb p-B-n structure has been designed and characterized for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25â
µm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0â
µm, achieved at zero bias. D* of 9.4 × 1010 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1 × 1010 Jones up to 380â
K. With a view to simple miniaturized detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilization or phase-sensitive detection, indicating the photodiode's potential.
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01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2023
Tipo del documento:
Article