Halogen Doping Mechanism and Interface Strengthening in the Na<sub>3</sub>SbS<sub>4</sub> Electrolyte via Solid-State Synthesis.

Yu, Liangliang; Yin, Jingxuan; Gao, Chengwei; Lin, Changgui; Shen, Xiang; Dai, Shixun; Jiao, Qing

Halogen Doping Mechanism and Interface Strengthening in the Na₃SbS₄ Electrolyte via Solid-State Synthesis.

Yu, Liangliang; Yin, Jingxuan; Gao, Chengwei; Lin, Changgui; Shen, Xiang; Dai, Shixun; Jiao, Qing.

Afiliación

Yu L; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Yin J; Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China.
Gao C; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Lin C; Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China.
Shen X; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Dai S; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Jiao Q; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.

ACS Appl Mater Interfaces ; 15(26): 31635-31642, 2023 Jul 05.

Article en En | MEDLINE | ID: mdl-37345989

Palabras clave

crystalline structure; electrochemical stability; halogen doping; high conductivity; sulfide solid electrolyte

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google