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Contribution of Processes in SN Electrodes to the Transport Properties of SN-N-NS Josephson Junctions.
Ruzhickiy, Vsevolod; Bakurskiy, Sergey; Kupriyanov, Mikhail; Klenov, Nikolay; Soloviev, Igor; Stolyarov, Vasily; Golubov, Alexander.
Afiliación
  • Ruzhickiy V; Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Bakurskiy S; Dukhov All-Russia Research Institute of Automatics, 101000 Moscow, Russia.
  • Kupriyanov M; National University of Science and Technology MISIS, 119049 Moscow, Russia.
  • Klenov N; Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Soloviev I; National University of Science and Technology MISIS, 119049 Moscow, Russia.
  • Stolyarov V; Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Golubov A; National University of Science and Technology MISIS, 119049 Moscow, Russia.
Nanomaterials (Basel) ; 13(12)2023 Jun 16.
Article en En | MEDLINE | ID: mdl-37368303
ABSTRACT
In this paper, we present a theoretical study of electronic transport in planar Josephson Superconductor-Normal Metal-Superconductor (SN-N-NS) bridges with arbitrary transparency of the SN interfaces. We formulate and solve the two-dimensional problem of finding the spatial distribution of the supercurrent in the SN electrodes. This allows us to determine the scale of the weak coupling region in the SN-N-NS bridges, i.e., to describe this structure as a serial connection between the Josephson contact and the linear inductance of the current-carrying electrodes. We show that the presence of a two-dimensional spatial current distribution in the SN electrodes leads to a modification of the current-phase relation and the critical current magnitude of the bridges. In particular, the critical current decreases as the overlap area of the SN parts of the electrodes decreases. We show that this is accompanied by a transformation of the SN-N-NS structure from an SNS-type weak link to a double-barrier SINIS contact. In addition, we find the range of interface transparency in order to optimise device performance. The features we have discovered should have a significant impact on the operation of small-scale superconducting electronic devices, and should be taken into account in their design.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Rusia

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Rusia