In Situ Radiation Hardness Study of Amorphous Zn-In-Sn-O Thin-Film Transistors with Structural Plasticity and Defect Tolerance.
ACS Appl Mater Interfaces
; 15(28): 33751-33762, 2023 Jul 19.
Article
en En
| MEDLINE
| ID: mdl-37404033
ABSTRACT
Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc-indium-tin oxide (Zn-In-Sn-O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 411 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In-Ga-Zn-O, Ga-Sn-O, Ga-In-Sn-O, and Ga-Sn-Zn-O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiation-resistant ZITO channel, a thin dielectric (50 nm SiO2), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of â¼10 cm2/V s and aΔVth of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2023
Tipo del documento:
Article