CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency.

Setälä, Olli E; Prest, Martin J; Stefanov, Konstantin D; Jordan, Douglas; Soman, Matthew R; Vähänissi, Ville; Savin, Hele

Setälä, Olli E; Prest, Martin J; Stefanov, Konstantin D; Jordan, Douglas; Soman, Matthew R; Vähänissi, Ville; Savin, Hele.

Afiliación

Setälä OE; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland.
Prest MJ; Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes, MK7 6AA, UK.
Stefanov KD; Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes, MK7 6AA, UK.
Jordan D; Teledyne e2v, 106 Waterhouse Lane, Chelmsford, Essex, CM1 2QU, UK.
Soman MR; ESA-ESTEC, P.O. Box 299, Noordwijk, 2200 AG, The Netherlands.
Vähänissi V; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland.
Savin H; Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland.

Small ; 19(47): e2304001, 2023 Nov.

Article en En | MEDLINE | ID: mdl-37495833

Palabras clave

antireflection coating; black silicon; complementary metal-oxide-semiconductor (CMOS) image sensors; dark current; quantum efficiency

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: Finlandia Pais de publicación: Alemania

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