Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs.
Micromachines (Basel)
; 14(7)2023 Jul 20.
Article
en En
| MEDLINE
| ID: mdl-37512768
ABSTRACT
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device's temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the introduction of a P-type GaN buried layer greatly weakens the peak of the channel electric field between the gate and drain of the device. This leads to a more uniform electric field distribution, a substantial reduction in the lattice temperature of the device, and a more uniform temperature distribution. Therefore, the phenomenon of negative resistance caused by self-heating effect is significantly mitigated, while the breakdown performance of the device is also notably enhanced.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Micromachines (Basel)
Año:
2023
Tipo del documento:
Article
País de afiliación:
China