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A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field.
Wang, Yuan; Tao, Lei; Guzman, Roger; Luo, Qing; Zhou, Wu; Yang, Yang; Wei, Yingfen; Liu, Yu; Jiang, Pengfei; Chen, Yuting; Lv, Shuxian; Ding, Yaxin; Wei, Wei; Gong, Tiancheng; Wang, Yan; Liu, Qi; Du, Shixuan; Liu, Ming.
Afiliación
  • Wang Y; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Tao L; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Guzman R; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
  • Luo Q; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
  • Zhou W; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Yang Y; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Wei Y; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
  • Liu Y; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Jiang P; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Chen Y; Frontier Institute of Chip and System, Fudan University, Shanghai, China.
  • Lv S; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Ding Y; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Wei W; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Gong T; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Wang Y; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Liu Q; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Du S; State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
  • Liu M; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Science ; 381(6657): 558-563, 2023 Aug 04.
Article en En | MEDLINE | ID: mdl-37535726
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Science Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Science Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos