Reconfigurable Logic-in-Memory Constructed Using an Organic Antiambipolar Transistor.
Nano Lett
; 23(17): 8339-8347, 2023 Sep 13.
Article
en En
| MEDLINE
| ID: mdl-37625158
ABSTRACT
We demonstrate an electrically reconfigurable two-input logic-in-memory (LIM) using a dual-gate-type organic antiambipolar transistor (DG-OAAT). The attractive feature of this device is that a phthalocyanine-cored star-shaped polystyrene is used as a nano-floating gate, which enables the electrical switching of individual logic circuits and stores the circuit information by the nonvolatile memory effect. First, the DG-OAAT exhibited Λ-shaped transfer curves with hysteresis by sweeping the bottom-gate voltage. Programming and erasing operations enabled the reversible shift of the Λ-shaped transfer curves. Furthermore, the top-gate voltage effectively tuned the peak voltages of the transfer curves. Consequently, the combination of dual-gate and memory effects achieved electrically reconfigurable two-input LIM operations. Individual logic circuits (e.g., OR/NAND, XOR/NOR, and AND/XOR) were reconfigured by the corresponding programming and erasing operations without any variations in the input signals. Our device concept has the potential to fulfill an epoch-making organic integration circuit with a simple device configuration.
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Colección:
01-internacional
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MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2023
Tipo del documento:
Article
País de afiliación:
Japón