Reversal of Band-Ordering Leads to High Hole Mobility in Strained <i>p</i>-type Scandium Nitride.

Rudra, Sourav; Rao, Dheemahi; Poncé, Samuel; Saha, Bivas

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride.

Rudra, Sourav; Rao, Dheemahi; Poncé, Samuel; Saha, Bivas.

Afiliación

Rudra S; Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Rao D; International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Poncé S; Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Saha B; International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.

Nano Lett ; 23(17): 8211-8217, 2023 Sep 13.

Article en En | MEDLINE | ID: mdl-37643148

Palabras clave

Boltzmann transport; Carrier Transport; Electron−phonon Coupling; First-principles Calculations; Ionized Impurity Scattering; Scandium Nitride (ScN); Strain-induced Band-ordering Reversal

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: India Pais de publicación: Estados Unidos

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