Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In<sub>2</sub>O<sub>3</sub> and Application to High-Performance Field-Effect Transistors.

Lee, Ho Young; Hur, Jae Seok; Cho, Iaan; Choi, Cheol Hee; Yoon, Seong Hun; Kwon, Yongwoo; Shong, Bonggeun; Jeong, Jae Kyeong

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors.

Lee, Ho Young; Hur, Jae Seok; Cho, Iaan; Choi, Cheol Hee; Yoon, Seong Hun; Kwon, Yongwoo; Shong, Bonggeun; Jeong, Jae Kyeong.

Afiliación

Lee HY; Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Hur JS; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Cho I; Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea.
Choi CH; Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Yoon SH; Department of Display Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Kwon Y; Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea.
Shong B; Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea.
Jeong JK; Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.

ACS Appl Mater Interfaces ; 2023 Oct 25.

Article en En | MEDLINE | ID: mdl-37877895

Palabras clave

atomic layer deposition; density functional theory; field-effect transistor; indium oxide; precursor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article Pais de publicación: Estados Unidos

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