High-Performance Complementary Circuits from Two-Dimensional MoTe2.
Nano Lett
; 23(23): 10939-10945, 2023 Dec 13.
Article
en En
| MEDLINE
| ID: mdl-37976291
ABSTRACT
Two-dimensional (2D) materials hold great promise for future complementary metal-oxide semiconductor (CMOS) technology. However, the lack of effective methods to tune the Schottky barrier poses a challenge in constructing high-performance complementary circuits from the same material. Here, we reveal that the polarity of pristine MoTe2 field-effect transistors (FETs) with minimized air exposure is n-type, irrespective of the metal contact type. The fabricated n-FETs with palladium contact can reach electron currents up to 275 µA/µm at VDS = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe2 FETs from n-type to unipolar p-type. By doping only in the contact region, we demonstrate hole currents up to 170 µA/µm at VDS= -2 V with preserved Ion/Ioff ratios of 105. Finally, we present a complementary inverter circuit comprising the high-performance n- and p-type FETs based on MoTe2, promoting the application of 2D materials in future electronic systems.
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01-internacional
Base de datos:
MEDLINE
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En
Revista:
Nano Lett
Año:
2023
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Article
País de afiliación:
Estados Unidos