Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics.

Elahi, Ehsan; Ahmad, Muneeb; Dahshan, A; Rabeel, Muhammad; Saleem, Sidra; Nguyen, Van Huy; Hegazy, H H; Aftab, Sikandar

Elahi, Ehsan; Ahmad, Muneeb; Dahshan, A; Rabeel, Muhammad; Saleem, Sidra; Nguyen, Van Huy; Hegazy, H H; Aftab, Sikandar.

Afiliación

Elahi E; Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea. Ehsanelahi@sju.ac.kr.
Ahmad M; Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
Dahshan A; Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia.
Rabeel M; Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
Saleem S; Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea.
Nguyen VH; Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea.
Hegazy HH; Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia.
Aftab S; Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia.

Nanoscale ; 16(1): 14-43, 2023 Dec 21.

Article en En | MEDLINE | ID: mdl-38018395

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: Corea del Sur

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