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Microfabrication of piezoelectric MEMS based on thick LiNbO3single-crystal films.
Ouhabaz, Merieme; Belharet, Djaffar; Micard, Quentin; Costanza, Mario; Giuffrida, Giada; Bartasyte, Ausrine; Trigona, Carlo; Margueron, Samuel.
Afiliación
  • Ouhabaz M; FEMTO-ST Institute, University of Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, F-25000 Besançon, France.
  • Belharet D; FEMTO-ST Institute, University of Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, F-25000 Besançon, France.
  • Micard Q; FEMTO-ST Institute, University of Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, F-25000 Besançon, France.
  • Costanza M; FEMTO-ST Institute, University of Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, F-25000 Besançon, France.
  • Giuffrida G; FEMTO-ST Institute, University of Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, F-25000 Besançon, France.
  • Bartasyte A; FEMTO-ST Institute, University of Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, F-25000 Besançon, France.
  • Trigona C; Institut Universitaire de France, Paris, France.
  • Margueron S; Dipartimento di Ingegneria Elettrica Elettronica e Informatica, Università degli Studi di Catania, viale A. Doria 6, I-95125 Catania, Italy.
Nanotechnology ; 35(18)2024 Feb 15.
Article en En | MEDLINE | ID: mdl-38176071
ABSTRACT
Microfabrication procedure of piezoelectric micro electro-mechanical systems based on 5µm thick LiNbO3films on SiO2/Si substrate at wafer scale including deep dry etching of thick LiNbO3films by implementing pulsed mode of Ar/SF6gas was developed. In particular, two (YXlt)/128°/90°LiNbO3-Si cantilevers with tip mass were fabricated and characterized in terms of resonance frequency (511 and 817 Hz), actuation and acceleration sensing capabilities. The quality factor of 89.5 and the electromechanical coupling of 4.8% were estimated from measured frequency dependency of electrical impedance, fitted by using Butterworth-Van Dyke model. The fabricated piezoelectric micro-electro-mechanical systems have demonstrated highly linear displacement with good sensitivity (5.28 ± 0.02µm V-1) as a function of applied voltage and high sensitivity to vibrations of 667 mV g-1indicating a suitability of the structure for actuation purposes and for acceleration or frequency sensing with high precision, respectively.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanotechnology Año: 2024 Tipo del documento: Article País de afiliación: Francia

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanotechnology Año: 2024 Tipo del documento: Article País de afiliación: Francia