Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets.
Materials (Basel)
; 17(7)2024 Apr 01.
Article
en En
| MEDLINE
| ID: mdl-38612123
ABSTRACT
CuGaO2 thin films were deposited using the RF magnetron sputtering technique using Cu2O and Ga2O3 targets. The films were deposited at room temperature onto a quartz slide. The sputtering power of Cu2O remained constant at 50 W, while the sputtering power of Ga2O3 was systematically varied from 150 W to 200 W. The films were subsequently subjected to annealing at temperatures of 850 °C and 900 °C in a nitrogen atmosphere for a duration of 5 h. XRD analysis on films deposited with a Ga2O3 sputtering power of 175 W annealed at 900 °C revealed the development of nearly single-phase delafossite CuGaO2 thin films. SEM images of films annealed at 900 °C showed an increasing trend in grain size with a change in sputtering power level. Optical studies performed on the film revealed a transmission of 84.97% and indicated a band gap of approximately 3.27 eV. The film exhibited a refractive index of 2.5 within the wavelength range of 300 to 450 nm.
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01-internacional
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MEDLINE
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En
Revista:
Materials (Basel)
Año:
2024
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Article
País de afiliación:
Estados Unidos