Your browser doesn't support javascript.
loading
Understanding asymmetric switching times in accumulation mode organic electrochemical transistors.
Guo, Jiajie; Chen, Shinya E; Giridharagopal, Rajiv; Bischak, Connor G; Onorato, Jonathan W; Yan, Kangrong; Shen, Ziqiu; Li, Chang-Zhi; Luscombe, Christine K; Ginger, David S.
Afiliación
  • Guo J; Molecular Engineering and Sciences Institute, University of Washington, Seattle, WA, USA.
  • Chen SE; Molecular Engineering and Sciences Institute, University of Washington, Seattle, WA, USA.
  • Giridharagopal R; Department of Chemistry, University of Washington, Seattle, WA, USA.
  • Bischak CG; Department of Chemistry, University of Washington, Seattle, WA, USA.
  • Onorato JW; Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
  • Yan K; State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, P. R. China.
  • Shen Z; State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, P. R. China.
  • Li CZ; State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, P. R. China.
  • Luscombe CK; Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
  • Ginger DS; pi-Conjugated Polymers Unit, Okinawa Institute of Science and Technology Graduate University, Onna-son, Japan.
Nat Mater ; 23(5): 656-663, 2024 May.
Article en En | MEDLINE | ID: mdl-38632374
ABSTRACT
Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics and real-time sensing applications. Existing models of device operation cannot explain the experimental observations that turn-off times are generally much faster than turn-on times in accumulation mode organic electrochemical transistors. Here, using operando optical microscopy, we image the local doping level of the transistor channel and show that turn-on occurs in two stages-propagation of a doping front, followed by uniform doping-while turn-off occurs in one stage. We attribute the faster turn-off to a combination of engineering as well as physical and chemical factors including channel geometry, differences in doping and dedoping kinetics and the phenomena of carrier-density-dependent mobility. We show that ion transport limits the operation speed in our devices. Our study provides insights into the kinetics of organic electrochemical transistors and guidelines for engineering faster organic electrochemical transistors.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: Estados Unidos
...