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Effect of point defects on the band alignment and transport properties of 1T-MoS2/2H-MoS2/1T-MoS2 heterojunctions.
Cong, Yifei; Tao, Bairui; Lu, Xinzhu; Liu, Xiaojie; Wang, Yin; Yin, Haitao.
Afiliación
  • Cong Y; Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China. wlyht@126.com.
  • Tao B; College of Communications and Electronics Engineering, Qiqihar University, Qiqihar, 161006, China. taobairui@qqhru.edu.cn.
  • Lu X; Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China. wlyht@126.com.
  • Liu X; Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China. wlyht@126.com.
  • Wang Y; Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China. yinwang@shu.edu.cn.
  • Yin H; Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China. wlyht@126.com.
Phys Chem Chem Phys ; 26(17): 13230-13238, 2024 May 01.
Article en En | MEDLINE | ID: mdl-38634402
ABSTRACT
Defects, which are an unavoidable component of the material preparation process, can have a significant impact on the properties of two-dimensional devices. In this work, we investigated theoretically the effects of different types and positions of point defects on band alignment and transport properties of metallic 1T-phase MoS2/semiconducting 2H-phase MoS2 junctions. We found that the Schottky barriers of junctions depend on the type of defects and their locations while showing anisotropic characteristics along the zigzag and armchair directions of 2H-phase MoS2. Moreover, defects in the central scattering region can generate local impurity states and introduce new transmission peaks, while defects at the interface do not generate impurity-state-related transmission peaks. Together, these defect-related peaks and Schottky barriers jointly affect the transport properties of the junctions. Understanding the complex behaviors of defects in devices can make the process of material preparation more efficient by avoiding harm.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido