Aluminum scandium nitride on 8-inch Si wafers: material characterization and photonic device demonstration.
Opt Express
; 32(10): 17525-17534, 2024 May 06.
Article
en En
| MEDLINE
| ID: mdl-38858934
ABSTRACT
The anisotropic optical properties of aluminum scandium nitride (Al1-xScxN) thin films for both ordinary and extraordinary light are investigated. A quantitative analysis of the band structures of the wurtzite Al1-xScxN is carried out. In addition, Al1-xScxN photonic waveguides and bends are fabricated on 8-inch Si substrates. With x = 0.087 and 0.181, the light propagation losses are 5.98 ± 0.11â
dB/cm and 8.23 ± 0.39â
dB/cm, and the 90° bending losses are 0.05â
dB/turn and 0.08â
dB/turn at 1550â
nm wavelength, respectively.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2024
Tipo del documento:
Article