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Synergic Surface Modifications of PbS Quantum Dots by Sodium Acetate in Solid-State Ligand Exchange toward Short-Wave Infrared Photodetectors.
Wang, Xiao; Song, Zhulu; Tang, Haodong; Li, Yiwen; Zhong, Huaying; Wu, Jiufeng; Wang, Weichao; Chen, Simin; Zhang, Wenjie; Fang, Fan; Hao, Junjie; Wu, Dan; Müller-Buschbaum, Peter; Cao, Leifeng; Tang, Zeguo; Tang, Jun; Zhang, Lei; Wang, Kai; Chen, Wei.
Afiliación
  • Wang X; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Song Z; School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
  • Tang H; Institute of Nanoscience and Applications, and Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
  • Li Y; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Zhong H; School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
  • Wu J; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany.
  • Wang W; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Chen S; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Zhang W; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Fang F; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Hao J; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Wu D; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.
  • Müller-Buschbaum P; College of New Materials & New Energies, Shenzhen Technology University, Shenzhen 518118, China.
  • Cao L; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany.
  • Tang Z; Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
  • Tang J; College of New Materials & New Energies, Shenzhen Technology University, Shenzhen 518118, China.
  • Zhang L; College of New Materials & New Energies, Shenzhen Technology University, Shenzhen 518118, China.
  • Wang K; School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
  • Chen W; Institute of Nanoscience and Applications, and Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Article en En | MEDLINE | ID: mdl-39087727
ABSTRACT
PbS quantum dots (QDs) are promising for short-wave infrared (SWIR) photodetection and imaging. Solid-state ligand exchange (SSLE) is a low-fabrication-threshold QD solid fabrication method. However, QD treatment by SSLE remains challenging in seeking refined surface passivation to achieve the desired device performance. This work investigates using NaAc in the ligand exchange process to enhance the film morphology and electronic coupling configuration of QD solids. By implementing various film and photodetector device characterization studies, we confirm that adding NaAc with a prominent adding ratio of 20 wt % NaAc with tetrabutylammonium iodide (TBAI) in the SSLE leads to an improved film morphology, reduced surface roughness, and decreased trap states in the QD solid films. Moreover, compared to the devices without NaAc treatment, those fabricated with NaAc-treated QD solids exhibit an enhanced performance, including lower dark current density (<100 nA/cm2), faster response speed, higher responsivity, detectivity, and external quantum efficiency (EQE reaching 25%). The discoveries can be insightful in developing efficient, low-cost, and low-fabrication-threshold QD SWIR detection and imager applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: China