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Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure.
Zhao, Xiaoyu; Wan, Zehong; Gong, Liyan; Tao, Guoyi; Zhou, Shengjun.
Affiliation
  • Zhao X; Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
  • Wan Z; The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
  • Gong L; Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
  • Tao G; The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
  • Zhou S; Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
Nanomaterials (Basel) ; 11(12)2021 Nov 28.
Article in En | MEDLINE | ID: mdl-34947580
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: Country of publication: