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Multifunctional Analog Resistance Switching of Si3N4-Based Memristors through Migration of Ag+ Ions and Formation of Si-Dangling Bonds.
Li, Dongyang; Li, Chunmei; Wang, Jinyong; Xu, Ming; Ma, Jian; Gu, Deen; Liu, Fucai; Jiang, Yadong; Li, Wei.
Affiliation
  • Li D; Key Laboratory of Information Materials of Sichuan Province, Southwest Minzu University, Chengdu 610041, P.R. China.
  • Li C; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
  • Wang J; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
  • Xu M; Key Laboratory of Information Materials of Sichuan Province, Southwest Minzu University, Chengdu 610041, P.R. China.
  • Ma J; Key Laboratory of Information Materials of Sichuan Province, Southwest Minzu University, Chengdu 610041, P.R. China.
  • Gu D; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
  • Liu F; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
  • Jiang Y; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
  • Li W; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
J Phys Chem Lett ; : 5101-5108, 2022 Jun 03.
Article in En | MEDLINE | ID: mdl-35657147
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Phys Chem Lett Year: 2022 Document type: Article Country of publication:
Fulltext
Add to My VHL
Print
XML
PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Phys Chem Lett Year: 2022 Document type: Article Country of publication: