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Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.
Hu, Guangliang; Shen, Yinchang; Shen, Lvkang; Ma, Chunrui; Liu, Ming.
Affiliation
  • Hu G; School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
  • Shen Y; School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
  • Shen L; School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
  • Ma C; State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
  • Liu M; School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Materials (Basel) ; 16(10)2023 May 17.
Article in En | MEDLINE | ID: mdl-37241425
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2023 Document type: Article Affiliation country: Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2023 Document type: Article Affiliation country: Country of publication: