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The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field.
Lyu, Jianan; Yang, Dongwang; Liu, Yutian; Li, Junhao; Zhang, Zinan; Li, Zhenming; Liu, Mingyang; Liu, Wei; Ren, Zhigang; Liu, Hongjing; Wu, Jinsong; Tang, Xinfeng; Yan, Yonggao.
Affiliation
  • Lyu J; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Yang D; Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China.
  • Liu Y; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Li J; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Zhang Z; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Li Z; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Liu M; Energy Storage and Electrotechnics Department, China Electric Power Research Institute, Beijing 100192, China.
  • Liu W; Energy Storage and Electrotechnics Department, China Electric Power Research Institute, Beijing 100192, China.
  • Ren Z; Energy Storage and Electrotechnics Department, China Electric Power Research Institute, Beijing 100192, China.
  • Liu H; SGCC Beijing Electric Power Research Institute, Beijing 100075, China.
  • Wu J; SGCC Beijing Electric Power Research Institute, Beijing 100075, China.
  • Tang X; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Yan Y; Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China.
ACS Appl Mater Interfaces ; 16(13): 16505-16514, 2024 Apr 03.
Article in En | MEDLINE | ID: mdl-38527233
ABSTRACT
The micro thermoelectric device (m-TED) boasts features such as adjustable volume, straightforward structure, and precise, rapid temperature control, positioning it as the only current solution for managing the temperature of microelectronic systems. It is extensively utilized in 5G optical modules, laser lidars, and infrared detection. Nevertheless, as the size of the m-TED diminishes, the growing proportion of interface damages the device's operational reliability, constraining the advancement of the m-TED. In this study, we used commercially available bismuth telluride materials to construct the m-TED. The device's reliability was tested under various temperatures -40, 85, 125, and 150 °C. By deconstructing and analyzing the devices that failed during the tests, we discovered that the primary cause of device failure was the degradation of the solder layer. Moreover, we demonstrated that encapsulating the device with polydimethylsiloxane (PDMS) could effectively delay the deterioration of its performance. This study sparks new insights into the service reliability of m-TEDs and paves the way for further optimizing device interface design and enhancing the device manufacturing process.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2024 Document type: Article Affiliation country: Country of publication:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2024 Document type: Article Affiliation country: Country of publication: