Carrier-controlled ferromagnetism in transparent oxide semiconductors.
Nat Mater
; 5(4): 298-304, 2006 Apr.
Article
de En
| MEDLINE
| ID: mdl-16547517
ABSTRACT
The search for an ideal magnetic semiconductor with tunable ferromagnetic behaviour over a wide range of doping or by electrical gating is being actively pursued as a major step towards realizing spin electronics. A magnetic semiconductor having a high Curie temperature, capable of independently controlled carrier density and magnetic doping, is crucial for developing spin-based multifunctional devices. Cr-doped In(2)O(3) is such a unique system, where the electrical and magnetic behaviour-from ferromagnetic metal-like to ferromagnetic semiconducting to paramagnetic insulator-can be controllably tuned by the defect concentration. An explicit dependence of magnetic interaction leading to ferromagnetism on the carrier density is shown. A carrier-density-dependent high Curie temperature of 850-930 K has been measured, in addition to the observation of clear magnetic domain structures in these films. Being optically transparent with the above optimal properties, Cr-doped In(2)O(3) emerges as a viable candidate for the development of spin electronics.
Recherche sur Google
Collection:
01-internacional
Base de données:
MEDLINE
Sujet principal:
Oxydes
/
Fer
/
Magnétisme
Langue:
En
Journal:
Nat Mater
Sujet du journal:
CIENCIA
/
QUIMICA
Année:
2006
Type de document:
Article
Pays d'affiliation:
États-Unis d'Amérique