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Kondo effect in magnetic tunnel junctions.
Lee, K I; Joo, S J; Lee, J H; Rhie, K; Kim, Tae-Suk; Lee, W Y; Shin, K H; Lee, B C; LeClair, P; Lee, J-S; Park, J-H.
Affiliation
  • Lee KI; Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-792, Korea.
Phys Rev Lett ; 98(10): 107202, 2007 Mar 09.
Article de En | MEDLINE | ID: mdl-17358561
ABSTRACT
Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30 K.
Recherche sur Google
Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Phys Rev Lett Année: 2007 Type de document: Article
Recherche sur Google
Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Phys Rev Lett Année: 2007 Type de document: Article