Annular fast electron transport in silicon arising from low-temperature resistivity.
Phys Rev Lett
; 111(9): 095001, 2013 Aug 30.
Article
de En
| MEDLINE
| ID: mdl-24033041
ABSTRACT
Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
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Collection:
01-internacional
Base de données:
MEDLINE
Langue:
En
Journal:
Phys Rev Lett
Année:
2013
Type de document:
Article
Pays d'affiliation:
Royaume-Uni