Transient characteristics for proton gating in laterally coupled indium-zinc-oxide transistors.
ACS Appl Mater Interfaces
; 7(11): 6205-10, 2015 Mar 25.
Article
de En
| MEDLINE
| ID: mdl-25741771
ABSTRACT
The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processings of chemical species. Here, we observed the field-configurable proton effects in a laterally coupled transistor gated by phosphorosilicate glass (PSG). The bias on the lateral gate would modulate the interplay between protons and electrons at the PSG/indium-zinc-oxide (IZO) channel interface. Due to the modulation of protons flux within the PSG films, the IZO channel current would be modified correspondingly. The characteristic time for the proton gating is estimated to be on the order of 20 ms. Such laterally coupled oxide based transistors with proton gating are promising for low-cost portable biosensors and neuromorphic system applications.
Mots clés
Texte intégral:
1
Collection:
01-internacional
Base de données:
MEDLINE
Sujet principal:
Transistors électroniques
/
Oxyde de zinc
/
Électrodes
/
Indium
Langue:
En
Journal:
ACS Appl Mater Interfaces
Sujet du journal:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Année:
2015
Type de document:
Article