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Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.
Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobac, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo.
Affiliation
  • Yamazaki S; †The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
  • Maeda K; ‡Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871, Japan.
  • Sugimoto Y; ‡Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871, Japan.
  • Abe M; ¶Graduate School of Engineering Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan.
  • Zobac V; §Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10/112, Prague, 162 00, Czech Republic.
  • Pou P; ∥Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
  • Rodrigo L; ∥Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
  • Mutombo P; §Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10/112, Prague, 162 00, Czech Republic.
  • Pérez R; ∥Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
  • Jelínek P; ‡Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871, Japan.
  • Morita S; §Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10/112, Prague, 162 00, Czech Republic.
Nano Lett ; 15(7): 4356-63, 2015 Jul 08.
Article de En | MEDLINE | ID: mdl-26027677
We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.
Mots clés

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nano Lett Année: 2015 Type de document: Article Pays d'affiliation: Japon Pays de publication: États-Unis d'Amérique

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nano Lett Année: 2015 Type de document: Article Pays d'affiliation: Japon Pays de publication: États-Unis d'Amérique