A p-i-n junction diode based on locally doped carbon nanotube network.

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei.

Affiliation

Liu X; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Chen C; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Wei L; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Hu N; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Song C; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Liao C; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
He R; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Dong X; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Wang Y; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Liu Q; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi
Zhang Y; Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, Chi

Sci Rep ; 6: 23319, 2016 Mar 21.

Article de En | MEDLINE | ID: mdl-26996610

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Sci Rep Année: 2016 Type de document: Article Pays de publication: Royaume-Uni

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