Publisher's Note: "High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors" [Rev. Sci. Instrum. 87, 044702 (2016)].

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C.

Affiliation

Giusi G; University of Messina, I-98166 Messina, Italy.
Giordano O; University of Messina, I-98166 Messina, Italy.
Scandurra G; University of Messina, I-98166 Messina, Italy.
Rapisarda M; IMM-CNR, I-00133 Rome, Italy.
Calvi S; IMM-CNR, I-00133 Rome, Italy.
Ciofi C; University of Messina, I-98166 Messina, Italy.

Rev Sci Instrum ; 87(5): 059902, 2016 05.

Article de En | MEDLINE | ID: mdl-27250488

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Type d'étude: Diagnostic_studies Langue: En Journal: Rev Sci Instrum Année: 2016 Type de document: Article Pays d'affiliation: Italie Pays de publication: États-Unis d'Amérique

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