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Selenium-Containing Fused Bicyclic Heterocycle Diselenolodiselenole: Field Effect Transistor Study and Structure-Property Relationship.
Debnath, Sashi; Chithiravel, Sundaresan; Sharma, Sagar; Bedi, Anjan; Krishnamoorthy, Kothandam; Zade, Sanjio S.
Affiliation
  • Debnath S; Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India.
  • Chithiravel S; Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, CSIR-Network of Institutes for Solar Energy , Dr Homi Bhabha Road, Pune 411008, India.
  • Sharma S; Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST) , Paschim Boragaon, Guwahati 781035, India.
  • Bedi A; Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India.
  • Krishnamoorthy K; Polymer Science and Engineering Division, CSIR-National Chemical Laboratory, CSIR-Network of Institutes for Solar Energy , Dr Homi Bhabha Road, Pune 411008, India.
  • Zade SS; Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India.
ACS Appl Mater Interfaces ; 8(28): 18222-30, 2016 Jul 20.
Article de En | MEDLINE | ID: mdl-27353123
ABSTRACT
The first application of the diselenolodiselenole (C4Se4) heterocycle as an active organic field effect transistor materials is demonstrated here. C4Se4 derivatives (2a-2d) were obtained by using a newly developed straightforward diselenocyclization protocol, which includes the reaction of diynes with selenium powder at elevated temperature. C4Se4 derivatives exhibit strong donor characteristics and planar structure (except 2d). The atomic force microscopic analysis and thin-film X-ray diffraction pattern of compounds 2a-2d indicated the formation of distinct crystalline films that contain large domains. A scanning electron microscopy study of compound 2b showed development of symmetrical grains with an average diameter of 150 nm. Interestingly, 2b exhibited superior hole mobility, approaching 0.027 cm(2) V(-1) s(-1) with a transconductance of 9.2 µS. This study correlate the effect of π-stacking, Se···Se intermolecular interaction, and planarity with the charge transport properties and performance in the field effect transistor devices. We have shown that the planarity in C4Se4 derivatives was achieved by varying the end groups attached to the C4Se4 core. In turn, optoelectronic properties can also be tuned for all these derivatives by end-group variation.
Mots clés

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: ACS Appl Mater Interfaces Sujet du journal: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Année: 2016 Type de document: Article Pays d'affiliation: Inde

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: ACS Appl Mater Interfaces Sujet du journal: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Année: 2016 Type de document: Article Pays d'affiliation: Inde