Temperature-Induced Topological Phase Transition in HgTe Quantum Wells.
Phys Rev Lett
; 120(8): 086401, 2018 Feb 23.
Article
de En
| MEDLINE
| ID: mdl-29543000
ABSTRACT
We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures, and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electronlike and holelike subbands. Their crossing at a critical magnetic field B_{c} is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of B_{c}, we directly extract the critical temperature T_{c} at which the bulk band gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.
Texte intégral:
1
Collection:
01-internacional
Base de données:
MEDLINE
Langue:
En
Journal:
Phys Rev Lett
Année:
2018
Type de document:
Article
Pays d'affiliation:
France